国家/地区 日本（24） 美国（11） 世界知识产权组织（8） 台湾（3） 中国（2）
IPC部 C（25） H（19） B（7）
IPC大类 C01（25） H01（18） B82（4）
C23（3）
IPC小类 C01B（25） H01L（18） B82Y（4）
C23C（2）
IPC C01B031/02（25）
发明人 SATO S（8） HAYASHI K（4） JIPPO H（4）
KONDO T（3） OFUCHI M（3） YAMAGUCHI J（3）
ASANO K（2） KAWABATA A（2） KONDO D（2）
OBUCHI M（2） SATO M（2）
公开年 2012（5） 2015（5） 2013（4） 2014（4） 2008（2） 2009（2）
申请年 2011（4）  2013（4）  2007（3）  2010（3）  2012（3）  2014（3）  2015（3） 
专利权人 FUJITSU LTD（25）

Electronic apparatus such as transistor has hole portions for scattering edge portions of graphene element respectively, with deficient carbon atoms, and metals connected with edge portions of graphene element.

JIPPO H

Electronic device e.g. tunnel transistor, comprises channel layer comprising graphene(s) with edge portions terminated with modifying groups different from each other bonded to each other, and electrodes formed on channel layer.

SATO S, JIPPO H, OHFUCHI M, OFUCHI M

Manufacturing method of graphene film, involves removing catalyst metal film in oxidation atmosphere of oxidizer and transferring graphene film to substrate.

KONDO D, NAKANO H, KONDO T, NAKANO M

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Carbon electrically conductive structure used in semiconductor device e.g. semiconductor memory, has first graphene whose edge is electrically connected with edge of second graphene.

SATO M

Semiconductor device has channel layer whose right edge is bonded with substrate and left edge is floated from substrate, and that is made of graphene by ether bond or ester bond.

JIPPO H

Graphene film for manufacture of electronic apparatus, comprises preset number of six-membered carbon rings which are linked and aligned in short direction, and edge structure along long direction which is completely of armchair-type.

YAMAGUCHI J, SATO S, YAMADA H, TANAKA K, YAMADA Y

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K